4*8cm Triple junction Gallium arsenide solar cell sale
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4*8cm Triple junction Gallium arsenide solar cell

4*8cm triple junction gaas cell is used for nanosatellite and cubesat application. You can also use it into tracking system etc. It has high efficiency and triple junction and crisp feature to make it flexbile.

Technical data for 4*8cm Triple junction Gallium arsenide solar cell

1、Solar Cell Schematic Structure
n-on-p structure, Ge substrate
GaInP/InGaAs/Ge Triple Junction Solar Cell
Al2O3/TiOX DARC
Method of GaAs growth: MOCVD
2、Features
Bare cell
Area: 30.15mm2
Size: 80.0mm×40.0mm
Thickness: 155±20 um
CIC
Size: Drawing 1
Weight:3.8g±0.2g(with cover glass and bypass diode
3、Typical Electrical Parameters
(AM0, 135.3mW/cm2, 25℃)
Jsc=17.2mA/cm2
Voc=2.70V
Vm=2.36
Jm=16.4
Eff= 30%
4. Thermal Properties
Solar Absorptance ≤ 0.92
Emittance (Normal)= 0.84±0.02
5. Radiation Degradation ( Fluence 1MeV )
Parameters 1×1014e/cm2 5×1014e/cm2 1×1015e/cm2
Imp/Imp0 0.99 0.96 0.94
Vmp/Vmp0 0.94 0.92 0.91
Pmp/Pmp0 0.93 0.88 0.85
6. Temperature Coefficients (15℃~75℃)
Parameters BOL 1 MeV, 5×1014e/cm2
Jsc (uA/cm2/℃) 5 6
Voc (mV/℃) -6.2 -6.6

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